Substrate rinsing and drying method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 16, 2003
Grant Date -
Mar 28, 2002
app pub date -
May 15, 2001
filing date -
May 15, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The wafers W are dipped and rinsed in pure water in the processing bath 60, and then dichloromethane is fed into the processing bath 60, thereby changing the state of the wafer W from being dipped in pure water to being dipped in dichloromethane. Thereafter, the wafers W is raised up to the drying chamber 61, and dichloromethane remained on the surface of each wafer W is evaporated, and the hot N.sub.2 gas is discharged onto the wafers W. Thereby, no water marks are produced, and no resist is dissolved, and the substrate can be dried in safety.
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