Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6621132
SERIAL NO

09942378

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Abstract

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The super-junction semiconductor device, which facilitates increased switching speed and reduced on-resistance, includes an alternating conductivity type layer formed of n-type drift regions and p-type partition regions arranged alternately, a pair of the n-type drift region and p-type partition region repeating at a first repeating pitch, and trenches each containing a gate electrode buried therein, the trenches being arranged repeatedly at a second repeating pitch wider than the first repeating pitch. The device further includes one or more n-type channel regions between a p-type partition regions and a p-type well region.

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Patent Owner(s)

  • FUJI ELECTRIC CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujihira, Tatsuhiko Nagano, JP 98 2899
Iwamoto, Susumu Nagano, JP 54 1341
Onishi, Yasuhiko Nagano, JP 57 1374
Sato, Takahiro Nagano, JP 369 3777
Ueno, Katsunori Nagano, JP 123 2427

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