Magnetic random access memory having a vertical write line
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United States of America Patent
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Sep 16, 2003
Grant Date -
N/A
app pub date -
Aug 27, 2002
filing date -
Aug 27, 2002
priority date (Note) -
Expired
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Abstract
A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.
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