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Abstract

A method for making CMOQ transistors and associated devices. The method is used to make transistors of a first type and a second type in CMOS technology in an active layer. The method etches regions of the active layer or making them inactive so as to define active islands designed to form sources, channels of determined width, and drains of the transistors of the first type and second type respectively, covers at least two active islands with an insulating layer and covers the insulating layer with a conductive layer, and sequentially etches all the gates of the transistors of the first type and then all the gates of the transistors of the second type. The associated devices includes CMOS transistor devices obtained by the method. Such a method may particularly find application to devices for the addressing and control of active matrix liquid crystal displays.

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