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Abstract

The invention pertains to semiconductor circuit components and capacitors, and to methods of forming capacitors and semiconductor circuit components. In one aspect, the invention includes a method of forming a dielectric layer comprising: a) forming a first tantalum-comprising layer; and b) forming a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen. In another aspect, the invention includes a method of forming a capacitor comprising: a) forming a first capacitor plate; b) forming a first layer over the first capacitor plate, the first layer comprising tantalum and oxygen; c) annealing the first layer in the presence of an ambient comprising a nitrogen-comprising gas containing at least one compound selected from a group consisting of ammonia, hydrazine and hydrazoic acid; the annealing forming a second layer over the first layer; and d) forming a second capacitor plate over the second layer. In another aspect, the invention includes a capacitor comprising: a) a first capacitor plate; b) a first tantalum-comprising layer over the first capacitor plate; c) a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen; and d) a second capacitor plate over the second tantalum-comprising layer. In another aspect, the invention includes a component comprising: a) a first tantalum-comprising layer; and b) a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen.

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First Claim