Bit line and manufacturing method thereof
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United States of America Patent
Stats
-
Sep 30, 2003
Grant Date -
Aug 9, 2001
app pub date -
Feb 7, 2001
filing date -
Feb 8, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for manufacturing a bit line is disclosed. Such a method includes: forming a layer-insulation layer on the surface of a semiconductor substrate; forming a contact hole on a predetermined region of the layer-insulation layer; forming a first conductive layer on the upper surface of the layer-insulation layer and inside the contact hole, the first conductive layer being made of a metal; forming a second conductive layer on the upper surface of the first conductive layer, the second conductive layer being made of a metal; and patterning the first and the second conductive layers together. The bit line made of a metal is manufactured to be integrated with a plug. The first conductive layer is formed by sputtering while the second conductive layer is formed by chemical vapor deposition, thereby shortening the process and improving the characteristics of the bit line.
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