Floating gate memory device using composite molecular material
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United States of America Patent
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Sep 30, 2003
Grant Date -
Nov 7, 2002
app pub date -
May 7, 2002
filing date -
May 7, 2001
priority date (Note) -
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Abstract
A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.
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