Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
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United States of America Patent
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Oct 7, 2003
Issued Date -
N/A
app pub date -
May 9, 2001
filing date -
May 9, 2001
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Abstract
In one embodiment of the present invention, a highly reflective dielectric stack is formed on the mesa wall of a flip-chip LED. The layers of the dielectric stack are selected to maximize reflection of light incident at angles ranging from -10 to 30 degrees, relative to the substrate. The dielectric stack is comprised of alternating low refractive index and high refractive index layers. In some embodiments, the LED is a III-nitride device with a p-contact containing silver, the dielectric stack layer adjacent to the mesa wall has a low refractive index compared to GaN, and the low refractive index layers are Al.sub.2 O.sub.3.
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