Parametrical generation laser
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United States of America Patent
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Oct 7, 2003
Grant Date -
N/A
app pub date -
Sep 29, 2000
filing date -
Oct 1, 1999
priority date (Note) -
Expired
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Abstract
This semiconductor laser comprises at least two layers of optically non-linear material as well as a quantum well at least located within one of the layers of optically non-linear material. The thicknesses and optical indices of these two layers are such that the waveguide constituted by these two layers has a modal phase matching condition for the process of parametrical fluorescence between the pump wave emitted by the quantum well and the parametrical conversion waves.
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