Generating mask layout data for simulation of lithographic processes
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United States of America Patent
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Oct 7, 2003
Grant Date -
Jun 27, 2002
app pub date -
Sep 7, 2001
filing date -
Sep 7, 2000
priority date (Note) -
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Abstract
A method for generating mask layout data for lithography simulation includes prescribing original data defining an original layout of a mask and determining a deviation between the original layout and a subsequent layout of a mask derived from said original layout. On the basis of this deviation, new data defining a new layout is calculated. This new layout is more similar to the subsequent layout that it is to the original layout.
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