Method for avoiding defects produced in the CMP process
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United States of America Patent
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Oct 14, 2003
Grant Date -
Oct 24, 2002
app pub date -
Apr 18, 2001
filing date -
Apr 18, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for avoiding defects produced in The CMP process has the following steps: sequentially depositing a first dielectric layer and a second dielectric layer on a semiconductor substrate, wherein the wet-etching rate of the first dielectric layer is greater than the wet-etching rate of the second dielectric layer; forming a plurality of first holes on a plurality of the predetermined contact window areas respectively; wet etching the first dielectric layer in each of the first holes to form a plurality of second holes on the plurality of the predetermined contact window areas respectively; forming a conductive layer to fill each of the second holes; and performing the CMP process to level off the conductive layer and the second dielectric layer.
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