Semiconductor memory device and memory system

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United States of America Patent

PATENT NO 6633508
APP PUB NO 20020031036A1
SERIAL NO

09939677

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Abstract

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Two memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific write operation mode to associate a logic 1 of a write signal with a state in which an electric charge exists in each capacitor. Further, a logic 0 of the write signal is associated with a state in which no electric charge exists in the capacitor to write the same write signal. Two dynamic memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific read operation mode to associate a state in which an electric charge exists in a capacitor of each dynamic memory cell with a logic 1 of a read signal and associate a state in which no electric charge exists in the capacitor with a logic 0 of the read signal in response to a write operation. Thus, the logics 1 of the two read signals are preferentially output.

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Patent Owner(s)

Patent OwnerAddress
PS4 LUXCO S A R L208 VAL DES BONS MALADES LUXEMBOURG L-2121

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kenmizaki, Kanehide Kodaira, JP 11 212
Kitame, Tetsuya Kodaira, JP 6 135
Miyatake, Shinichi Hamura, JP 54 535
Morino, Makoto Akishima, JP 29 452
Muranaka, Masaya Akishima, JP 28 894
Suzuki, Yukihide Akishima, JP 27 487

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