Method of etching and cleaning using fluorinated carbonyl compounds
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United States of America Patent
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Oct 21, 2003
Grant Date -
Jul 25, 2002
app pub date -
Dec 31, 1997
filing date -
Dec 31, 1997
priority date (Note) -
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Abstract
A method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of F--CO--[(CR.sup.1 R.sup.2).sub.m --CO].sub.n --F and F--CO--R.sup.3 --CO--F, and wherein: m=0, 1, 2, 3, 4, or 5; n=1; R.sup.1 & R.sup.2 represent H, F or C.sub.x H.sub.y F.sub.z ; wherein: x=1 or 2; and y+z=2x+1; R.sup.3 represents CR.sup.4.dbd.CR.sup.5, R.sup.6 R.sup.7 C.dbd.C or C.ident.C; wherein: R.sup.4-7 represent H, F, or C.sub.x H.sub.y F.sub.z ; wherein: x=1 or 2; and y+z=2x+1; and also including the cleaning of a surface by use of an etchant compound, and further including an etching composition which includes said etchant compound and also an etchant-modifier.
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