Method of manufacturing an active matrix type semiconductor display device
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United States of America Patent
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-
Oct 21, 2003
Grant Date -
Apr 3, 2003
app pub date -
Nov 18, 2002
filing date -
Nov 17, 1998
priority date (Note) -
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Abstract
There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present invention, a counter electrode is divided into two, different potentials are applied to the two counter electrodes, respectively and inversion driving is carried out each other. Since a potential of an image signal can be made low by doing so, it is possible to lower a voltage necessary for operation of a driver circuit. As a result, it is possible to realize improvement of reliability of an element such as a TFT and reduction of consumed electric power. Moreover, since it is possible to lower a voltage of a timing pulse supplied by the driver circuit, a booster circuit can be omitted, and reduction of an area of the driver circuit can be realized.
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