Organic semiconductor device and process of manufacturing the same
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United States of America Patent
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Oct 21, 2003
Grant Date -
Dec 5, 2002
app pub date -
May 29, 2002
filing date -
Jun 1, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention is for providing a sophisticated active matrix type organic semiconductor device. A first electrode 102 is formed on an insulated surface. A second insulated film 104 is formed on the first electrode 102 via a first insulated film 103. An organic semiconductor film is formed on an opening part formed on the second insulated film 104 and the second insulated film 104. An organic semiconductor film 105 is obtained by polishing the same until the second insulated film 104 is exposed. Furthermore, by forming a second electrode 106 and a third electrode 107 on the organic semiconductor film 105, an organic semiconductor device of the present invention can be obtained.
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