Method of manufacturing a trench MOSFET using selective growth epitaxy
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United States of America Patent
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Oct 21, 2003
Issued Date -
N/A
app pub date -
Feb 9, 2001
filing date -
Jun 5, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of manufacturing a trench structure for a trench MOSFET, including the steps of providing a semiconductor substrate having a major surface, forming a dielectric pillar on the substrate major surface (the dielectric pillar extending substantially perpendicularly from the major surface of the substrate), selectively forming a semiconductor layer around the dielectric pillar, and removing a predetermined length of the dielectric pillar to create a trench in the substrate, the trench defined by sidewalls and a bottom. The method permits the controlled formation of a dielectric plug at the bottom of the trench, the plug having predetermined dimensions.
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