Formation of insulating aluminum oxide in semiconductor substrates
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United States of America Patent
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Oct 21, 2003
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app pub date -
Sep 6, 2001
filing date -
Sep 6, 2001
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Abstract
The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. For example, in one aspect, the invention provides vertical insulating layers separating two devices, such as photodiodes, formed on a semiconductor substrate from one another. In another aspect, the invention can provide such insulating layers as buried horizontal insulating layers of semiconductor devices.
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