Method of forming dielectric films
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United States of America Patent
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Oct 28, 2003
Issued Date -
N/A
app pub date -
Sep 19, 2001
filing date -
Sep 19, 2000
priority date (Note) -
Expired
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Abstract
A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
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