Method and apparatus for detecting processing faults using scatterometry measurements
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United States of America Patent
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Oct 28, 2003
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N/A
app pub date -
May 23, 2001
filing date -
May 23, 2001
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Abstract
A method for characterizing a misprocessed wafer includes providing a wafer having a grating structure; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and characterizing a misprocessed condition of the wafer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to characterize a misprocessed condition of the wafer based on the reflection profile.
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