Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell
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United States of America Patent
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Oct 28, 2003
Grant Date -
Aug 28, 2003
app pub date -
Feb 3, 2003
filing date -
Feb 28, 2002
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Abstract
In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell.
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