Film forming method and semiconductor device

United States of America Patent

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Nov 4, 2003
Grant Date
Oct 25, 2001
app pub date
Dec 22, 2000
filing date
Dec 28, 1999

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Abstract

There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

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Patent Owner(s)

Patent Owner	Address
CANON KABUSHIKI KAISHA	JAPAN

International Classification(s)

H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

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Inventor Name	Address	# of filed Patents	Total Citations
Ikakura, Hiroshi	Tokyo, JP	20	666
Kotake, Yuichiro	Tokyo, JP	5	122
Maeda, Kazuo	Tokyo, JP	139	3781
Ohgawara, Shoji	Tokyo, JP	6	124
Ohira, Kouichi	Tokyo, JP	24	545
Shioya, Yoshimi	Tokyo, JP	31	1773
Suzuki, Tomomi	Tokyo, JP	93	2811
Yamamoto, Youichi	Tokyo, JP	55	676

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Film forming method and semiconductor device

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United States of America Patent

09742242

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PATENT NO	6642157
APP PUB NO	20010034140A1
SERIAL NO	09742242
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
November 04, 2003	US,6642157,B2 US6642157B2	GRANTED PATENT AS SECOND PUBLICATION
October 25, 2001	US,20010034140,A1 US20010034140A1	FIRST PUBLISHED PATENT APPLICATION

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09742242

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