Use of high-K dielectric material in modified ONO structure for semiconductor devices
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United States of America Patent
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Nov 4, 2003
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N/A
app pub date -
Mar 13, 2002
filing date -
Mar 13, 2002
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Abstract
A process for fabrication of a semiconductor device including a modified ONO structure, comprising forming the modified ONO structure by providing a semiconductor substrate; forming a first dielectric material layer on the semiconductor substrate; depositing a silicon nitride layer on the first dielectric material layer; and forming a top dielectric material layer, wherein at least one of the bottom dielectric material layer and the top dielectric material layer comprise a mid-K or a high-K dielectric material. The semiconductor device may be, e.g., a SONOS two-bit EEPROM device or a floating gate flash device including the modified ONO structure.
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