Linearity radio frequency switch with low control voltage
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United States of America Patent
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Nov 4, 2003
Grant Date -
N/A
app pub date -
Jul 22, 2002
filing date -
Jul 22, 2002
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A field effect transistor used in radio frequency switching applications and having a linear performance characteristic is disclosed. The transistor comprises a plurality of gate lines, a source terminal, a drain terminal, and two feed forward capacitors electrically coupled to the source and drain terminals and the gate line at a plurality of points along the line. An improved transistor preferably includes three or more gate lines to help improve harmonic suppression.
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