Substrate processing apparatus and substrate processing method
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United States of America Patent
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Nov 11, 2003
Grant Date -
Jun 13, 2002
app pub date -
Feb 4, 2002
filing date -
Sep 3, 1999
priority date (Note) -
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Abstract
Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.
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