Process for forming a microcrystalline silicon series thin film and apparatus suitable for practicing said process
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United States of America Patent
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-
Nov 11, 2003
Grant Date -
Sep 6, 2001
app pub date -
Mar 3, 1999
filing date -
Mar 3, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in the vacuum chamber and while transporting the long substrate in a longitudinal direction, causing glow discharge between the electrode and the long substrate to deposit the microcrystalline silicon series thin film on the long substrate, wherein a plurality of bar-like shaped electrodes as the electrode are arranged such that they are perpendicular to a normal line of the long substrate and their intervals to the long substrate are all or partially different. The glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing the microcrystalline series thin film on the long substrate. An apparatus suitable for practicing the process is included.
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