Microelectronic interconnect material with adhesion promotion layer and fabrication method
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United States of America Patent
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Nov 11, 2003
Grant Date -
Aug 1, 2002
app pub date -
Jan 30, 2002
filing date -
Dec 22, 1998
priority date (Note) -
Expired
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Abstract
A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys for promoting adhesion of copper. The barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.
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