Film forming method, semiconductor device and manufacturing method of the same
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United States of America Patent
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Nov 11, 2003
Grant Date -
Jan 31, 2002
app pub date -
May 24, 2001
filing date -
Jun 22, 2000
priority date (Note) -
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Abstract
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N.sub.2) to a major deposition gas component consisting of siloxane and N.sub.2 O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
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