Semiconductor device and semiconductor device manufacturing method
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United States of America Patent
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Nov 11, 2003
Grant Date -
Sep 12, 2002
app pub date -
Apr 22, 2002
filing date -
Jul 21, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si--H bonds and siloxane having Si--H bonds and any one oxygen-containing gas selected from a group consisting of O.sub.2, N.sub.2 O, NO.sub.2, CO, CO.sub.2, and H.sub.2 O.
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