Low power type Rambus DRAM

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6646939
APP PUB NO 20030021175A1
SERIAL NO

10206702

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed is low power type Rambus DRAM including top/bottom memory bank units respectively comprising a plurality of banks for storing data, top and bottom serial/parallel shifter units, an interface logic circuit unit, a delay lock loop (DLL) unit and an input/output block unit. The top serial/parallel shifter unit is connected between the top memory bank unit and the input/output block unit and the bottom serial/parallel shifter unit is connected between the bottom memory bank unit and the input/output block unit. The interface logic circuit unit generates a signal for selecting the top or the bottom memory bank unit according to read or write command received from the external. The DLL unit generates a clock signal according to the signal outputted from the interface logic circuit unit. The input/output block unit generates a signal for selectively controlling the operation of top and bottom serial/parallel shifter units by buffering the clock signal generated from the DLL unit.

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kwak, Jong Tae Kyoungki-do, KR 24 378

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