Ultra-short channel NMOSFETS with self-aligned silicide contact
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United States of America Patent
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Nov 18, 2003
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app pub date -
Mar 30, 1998
filing date -
Mar 30, 1998
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Abstract
The ultra-short channel transistor in a semiconductor substrate includes a gate structure that is formed on the substrate. Side-wall spacers are formed on the side walls of the gate structure as an impurities-diffusive source. Source and drain regions are formed in the substrate. A metal silicide contact is formed on the top surface of the gate structure, and on the surface of the source and drain regions. Extended source and drain regions are formed beneath the side-wall spacers and connect next to the source and drain regions.
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