Local dry etching method
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United States of America Patent
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-
Nov 18, 2003
Grant Date -
Nov 21, 2002
app pub date -
May 15, 2002
filing date -
May 18, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a local dry etching method of the invention, a surface of a representative wafer sampled from a lot is test etched, each wafer of which is sliced from the same ingot, and initial data of recesses and projections of which is previously known, recesses and projections of the representative wafer is measured after test etched, an etching profile is derived from the initial data and measured data and then respective wafer surfaces of the lot are etched in condition calculated by using at least the derived etching profile.
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