Method for plasma treating and plasma nitriding gate oxides
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United States of America Patent
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Nov 18, 2003
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app pub date -
Oct 9, 2002
filing date -
Oct 9, 2002
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Abstract
A method for forming a nitrided gate oxide over a silicon substrate in a semiconductor device fabrication process including providing a silicon semiconductor substrate; thermally growing a gate oxide layer including silicon dioxide over the silicon substrate; plasma treating the gate oxide layer including a plasma supplied with a plasma source gas including at least one of helium, hydrogen, deuterium, and oxygen; plasma nitriding the gate oxide layer according to a plasma treatment including a plasma supplied with a plasma source gas including nitrogen; and, thermally annealing the silicon semiconductor substrate including the gate oxide layer according to at least one annealing treatment.
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