Multi-level type nonvolatile semiconductor memory device
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United States of America Patent
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Nov 18, 2003
Grant Date -
Oct 10, 2002
app pub date -
May 17, 2002
filing date -
Apr 25, 1997
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Abstract
A method of writing data into a memory cell of a non-volatile semiconductor memory device includes setting a write voltage applied to portions of the memory cells depending upon a value of write data, and applying, to a gate electrode, a voltage by which an electric charge is allowed to tunnel through an insulating film on a lower side of a dialectric film that captures the electric charge corresponding to a data value. The amount of electric charge captured is easily and reliably adjusted in order to store desired multi-value digital data, while preventing occurrence of data corruption.
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