Method and apparatus for forming a capacitive structure including single crystal silicon
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United States of America Patent
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Nov 25, 2003
Grant Date -
Nov 20, 2003
app pub date -
May 16, 2002
filing date -
May 16, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A capacitive structure including single crystal silicon and an insulating layer in a semiconductor substrate. One embodiment of the present invention includes an optical switching device having one or more capacitive structures including single crystal silicon in a substrate such as a silicon-on-insulator (SOI) wafer and can be used in a variety of high bandwidth applications including multi-processor, telecommunications, networking or the like. In one embodiment, a capacitive structure includes single crystal silicon disposed in a first semiconductor material with an insulating layer disposed between the single crystal silicon and the semiconductor material. In one embodiment, a capacitive structure may be formed by laterally growing single crystal silicon through an opening in a trench adjacent to a trench where the capacitive structures is formed.
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