Methods for providing void-free layers for semiconductor assemblies
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 25, 2003
Issued Date -
N/A
app pub date -
Aug 28, 2002
filing date -
Mar 7, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of treating an interposer layer includes disposing an interposer layer between a semiconductor wafer and a substrate so that voids within the interposer layer are sealed and applying pressure to substantially eliminate the voids. A method of creating a substantially void-free interposer layer includes injecting the interposer layer between a wafer and a substrate and applying pressure to substantially remove the voids.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully