Semiconductor device and a method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Nov 25, 2003
Grant Date -
Aug 23, 2001
app pub date -
Dec 11, 2000
filing date -
Dec 10, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
To provide a TFT that can operate at a high speed by forming a crystalline semiconductor film while controlling the position and the size of a crystal grain in the film to use the crystalline semiconductor film for a channel forming region of the TFT. Instead of a metal or a highly heat conductive insulating film, only a conventional insulating film is used as a base film to introduce a temperature gradient. A level difference of the base insulating film is provided in a desired location to generate the temperature distribution in the semiconductor film in accordance with the arrangement of the level difference. The starting point and the direction of lateral growth are controlled utilizing the temperature distribution.
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