Integration of dual workfunction metal gate CMOS devices
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United States of America Patent
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Nov 25, 2003
Grant Date -
Jun 26, 2003
app pub date -
Dec 20, 2001
filing date -
Dec 20, 2001
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Abstract
A dual work function CMOS metal gate device provides a composite metal gate electrode structure. The composite metal gate structure includes a bulk metal and a thin metal layer having an appropriate work function for the transistor type and desired threshold voltage, V.sub.T. Both N-channel and P-channel transistors are formed to have distinct threshold voltages by incorporating the metal material having the appropriate work function for the desired V.sub.T into the composite metal gate electrode. The two different electrodes of the N-channel and P-channel transistors are electrically connected by means of the bulk metal.
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