Excimer laser crystallization of amorphous silicon film
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United States of America Patent
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Dec 2, 2003
Grant Date -
Apr 4, 2002
app pub date -
Oct 1, 2001
filing date -
Oct 2, 2000
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Abstract
A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.
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