Low loss high Q inductor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Dec 2, 2003
Issued Date -
N/A
app pub date -
Oct 22, 2001
filing date -
Aug 1, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A high Q inductive element with low losses, high inductance and high efficiency is disclosed. The high Q inductive element with one or more inductive loops is formed over a silicon micro structure with thin support elements formed by deep plasma etching in bulk silicon. The support elements, which may have different configurations, such as walls or columns, provide mechanical stability to the inductive loops and reduce the parasitic capacitance and the losses to the substrate.
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