Barrier layer buffing after Cu CMP

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United States of America Patent

PATENT NO 6656842
APP PUB NO 20010055880A1
SERIAL NO

09401643

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Abstract

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Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 .ANG..

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Emami, Ramin San Jose, CA 28 410
Ko, Sen-Hou Cupertino, CA 67 1252
Li, Shijian San Jose, CA 114 2388
Redeker, Fred C Fremont, CA 194 5232
White, John M Hayward, CA 380 22610

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