Memory of multilevel quantum dot structure and method for fabricating the same
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United States of America Patent
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Dec 2, 2003
Issued Date -
N/A
app pub date -
Nov 9, 2001
filing date -
Jun 29, 1998
priority date (Note) -
Expired
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Abstract
Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating layer on the first insulating layer at least once, and (3) agglomerating each of the conductive layers to form quantized dot layers.
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