Semiconductor anti-interference band for integrated circuit
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United States of America Patent
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Dec 2, 2003
Grant Date -
N/A
app pub date -
Jul 8, 2002
filing date -
Jul 8, 2002
priority date (Note) -
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Abstract
A semiconductor anti-interference band distributed on peripheries of partial of regional circuits in an integrated circuit is assembled by an unequal number of PNP structures; two metal bands are disposed on the surface layer of the integrated circuit, wherein one band connects with GND and the other connects with Vcc; to add positive voltage at Vcc increases the charge at P+ tip thereby generating a parasitic capacitance on a poly layer between two P+ tips and limiting a noisy signal within the distributed area; furthermore, the P+ tip and an N well connect to produce a positive voltage zone in a large area to forcefully prevent a noisy signal current from passing through and make it discharge at a ground end with lower voltage so as to achieve the electromagnetic anti-interference function of the integrated circuit.
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