Method of making ferroelectric material utilizing anneal in an electrical field
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United States of America Patent
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Dec 9, 2003
Grant Date -
Aug 21, 2003
app pub date -
Feb 21, 2002
filing date -
Feb 21, 2002
priority date (Note) -
Expired
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Abstract
A ferroelectric thin film precursor material is annealed while in an electric field. The electric field is maintained as the material cools. A partially completed integrated circuit with a ferroelectric thin film precursor material may be placed between two electrodes in an annealing apparatus and voltage sufficient to polarize the ferroelectric thin film material in the direction of the electrical field is supplied to the electrodes during the anneal and as the film cools. Alternatively, probes are connected to the electrodes of a partially completed integrated circuit device and voltage sufficient to polarize the ferroelectric material is applied while annealing the material and as it cools. The anneal may be a furnace anneal or an RTP anneal.
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