Dual trench alternating phase shift mask fabrication
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United States of America Patent
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-
Dec 9, 2003
Grant Date -
Nov 27, 2003
app pub date -
May 21, 2002
filing date -
May 21, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a quartz layer of the PSM is patterned according to a semiconductor design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the alternating PSM design by using beam writing. This initially forms deep trenches of the PSM. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the deep trenches and the shallow trenches of the alternating PSM design by using backside ultraviolet exposure. This completely forms shallow trenches and the deep trenches of the PSM. The second photoresist layer is then removed.
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