Projection exposure apparatus and method employing rectilinear aperture stops for use with periodic mask patterns
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United States of America Patent
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-
Dec 9, 2003
Issued Date -
N/A
app pub date -
Apr 10, 2000
filing date -
Feb 10, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A projection optical system and method projects and forms an image of a pattern arrayed on a first surface (mask), and exhibiting a periodicity in a predetermined direction (X- or Y-direction), on a second surface (wafer). A stop has an aperture showing a line symmetry with respect to a symmetric axis intersecting an optical axis of the projection optical system and extending in a direction (Y- or X-direction) orthogonal to the predetermined direction and having the outline at least a part of which are rectilinear portions. The stop is disposed on a Fourier transform plane of the first surface within the projection optical system or a surface in the vicinity thereof.
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