Method and system for programming a memory device
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United States of America Patent
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Dec 9, 2003
Grant Date -
N/A
app pub date -
Jun 13, 2002
filing date -
Jun 13, 2002
priority date (Note) -
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Abstract
A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.
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