Laser thermal annealing for Cu seedlayer enhancement
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United States of America Patent
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Dec 16, 2003
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N/A
app pub date -
Apr 3, 2002
filing date -
Apr 3, 2002
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Abstract
Semiconductor devices with highly reliable Cu interconnects exhibiting reduced resistance are formed by sequentially depositing a seedlayer by PVD, depositing a conformal seedlayer enhancement film by CVD, and then laser thermal annealing the seedlayer enhancement film in nitrogen to expel impurities, enhance film conductivity, reduce film stress, increase film density, and reduce film roughness. Embodiments include single and dual Cu damascene techniques formed in dielectric layers having a dielectric constant no greater than about 3.9.
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