Projection exposure methods using difracted light with increased intensity portions spaced from the optical axis
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United States of America Patent
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Dec 16, 2003
Grant Date -
Dec 26, 2002
app pub date -
Jul 16, 2002
filing date -
Nov 15, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An exposure method of exposing a mask pattern having linear features in orthogonal first and second directions onto an object including the steps of disposing a diffraction optical element that diffracts light in different directions from an optical axis of the illumination optical system between the light source and an optical integrator in the illumination optical system; distributing the diffracted light at regions apart from the optical axis on a predetermined plane substantially conjugate with a pupil plane of the projection optical system to form on the predetermined plane an intensity distribution having increased intensity portions relative to a portion on first and second axes defined to intersect each other at the optical axis along the first and second directions; and projecting the illuminated pattern having the intensity distribution onto the object.
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