Method of in situ monitoring of thickness and composition of deposited films using raman spectroscopy
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United States of America Patent
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Dec 23, 2003
Grant Date -
N/A
app pub date -
Feb 4, 2002
filing date -
Feb 2, 2001
priority date (Note) -
Expired
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Abstract
A novel method is provided for in situ monitoring of a film being deposited on a wafer for manufacturing a semiconductor device. The method involves producing an incident beam of radiation directed during a deposition process to a film being deposited on a wafer in a deposition reactor. The Raman scattered radiation resulted from interaction of the incident beam with molecules of the deposited film is detected to produce a Raman spectrum of the deposited film.
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