Method of forming a dielectric film

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United States of America Patent

PATENT NO 6669825
APP PUB NO 20020040847A1
SERIAL NO

09867767

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Abstract

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A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

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Patent Owner(s)

Patent OwnerAddress
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE586-9 USHIGAFUCHI AKATSUKA TSUKUBA-CITY IBARAKI PREFECTURE 305-0062

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohmi, Tadahiro 1-17-301, Komegafukuro 2-Chome, Aoba-Ku, Sendai-Shi, Miyagi 980-0813, JP 798 14083
Sugawa, Shigetoshi Sendai, JP 207 5471

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